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| SUD08P06-155L New Product Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) -60 60 rDS(on) (W) 0.155 @ VGS = -10 V 0.280 @ VGS = -4.5 V ID (A) -8.4 -7.4 Qg (Typ) 12.5 12 5 D TrenchFETr Power MOSFET D 175_C Rated Maximum Junction Temperature APPLICATIONS D Automotive Such As: - High-Side Switch - Motor Drives - 12-V Battery Termination is Pb-free S TO-252 G Drain Connected to Tab G D S D P-Channel MOSFET Top View Ordering Information: SUD08P06-155L--E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Continuing Source Current (Diode Conduction) Avalanche Current Single-Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_C TC = 25_C TC = 100_C Symbol VGS ID IDM IS IAS EAS PD TJ, Tstg Limit "20 -8.4 -6 -18 -8.4 -12 7.2 25a 2b -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb J ti t A bi t Junction-to-Case Notes a. See SOA Curve for Voltage Derating. b. Surface Mounted on 1" x 1" FR4 Board. Document Number: 73209 S-50385--Rev. A, 07-Mar-05 www.vishay.com t p 10 sec Steady State Symbol RthJA RthJC Typical 20 62 5 Maximum 25 75 6 Unit _C/W C/W 1 SUD08P06-155L Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = -250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -60 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currentb IDSS ID(on) VDS = -60 V, VGS = 0 V, TJ = 125_C VDS = -60 V, VGS = 0 V, TJ = 175_C VDS = -5 V, VGS = -10 V VGS = -10 V, ID = -5 A Drain-Source On-State Drain Source On State Resistanceb rDS(on) VGS = -10 V, ID = -5 A, TJ = 125_C VGS = -10 V, ID = -5 A, TJ = 175_C VGS = -4.5 V, ID = -2 A Forward Transconductanceb gfs VDS = -15 V, ID = -5 A 0.158 8 -10 0.125 0.155 0.280 0.350 0.280 S W -60 -1.0 -2.0 -3.0 "100 -1 -50 -150 A m mA V nA Symbol Test Condition Min Typa Max Unit Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Rise Timec Turn-Off Delay Fall Timec Timec Timec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = -30 V, RL = 3.57 W 30 ID ] 8.4 A, VGEN = -10 V, Rg = 2.5 W f = 1 MHz VDS = -30 V, VGS = -10 V, ID = -8.4 A , , VDS = -25 V, VGS = 0 V, f = 1 MHz 450 65 40 12.5 2.3 3.2 8.0 5 14 15 7 10 25 25 12 ns W 19 nC pF Source-Drain Diode Ratings and Characteristics (TC = 25_C)a Pulsed Current Forward Voltageb Reverse Recovery Time Reverse Recovery Charge ISM VSD trr Qrr IF = -2 A, VGS = 0 V IF = -8 A di/dt = 100 A/ms 8 A, -0.9 50 80 -20 -1.3 80 120 A V ns nC Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73209 S-50385--Rev. A, 07-Mar-05 SUD08P06-155L New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 6 V 20 Vishay Siliconix Transfer Characteristics TC = -55_C 25_C 24 I D - Drain Current (A) 5V 18 I D - Drain Current (A) 16 12 125_C 12 4V 8 6 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS - Gate-to-Source Voltage (V) Transconductance 12 10 g fs - Transconductance (S) 8 6 4 2 0 0 2 4 6 8 10 TC = -55_C r DS(on) - On-Resistance ( W ) 25_C 125_C 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 On-Resistance vs. Drain Current VGS = 4.5 V VGS = 10 V 4 8 12 16 20 ID - Drain Current (A) 800 700 V GS - Gate-to-Source Voltage (V) 600 500 400 300 200 100 0 0 Crss 10 20 30 40 50 60 Coss Ciss 16 ID - Drain Current (A) 20 VDS = 30 V ID = 8.4 A Capacitance Gate Charge C - Capacitance (pF) 12 8 4 0 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Document Number: 73209 S-50385--Rev. A, 07-Mar-05 www.vishay.com 3 SUD08P06-155L Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 10 VGS = 10 V ID = 50 A 1 1.7 1.4 I S - Source Current (A) rDS(on) - On-Resiistance (Normalized) TJ = 150_C 2.3 2.0 Source-Drain Diode Forward Voltage 0.1 TJ = 25_C 0.01 1.1 0.8 0.5 -50 0.001 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS 10 Drain Current vs. Case Temperature 100 Safe Operating Area 8 I D - Drain Current (A) I D - Drain Current (A) 10 10 ms *Limited by rDS(on) 100 ms 1 ms 10 ms 100 ms, dc 6 1 4 0.1 2 0.01 TC = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 0.001 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73209 S-50385--Rev. A, 07-Mar-05 SUD08P06-155L New Product THERMAL RATINGS Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.05 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73209. Document Number: 73209 S-50385--Rev. A, 07-Mar-05 www.vishay.com 5 |
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